氣氛

Atmosphere

爐溫（℃）

Furnace

表面負荷

（W/cm2）

Surface?Load

對元件的影響

Effect?On?Elements

解決辦法

Solution

氨

1290

3.8

與sic作用生成甲烷減少sio2保護膜?Decreasing SiO2 protective film by Acting with SiC to generate Methane

露點激活

Make it active at dew point

CO?

1450

3.1

腐蝕碳化硅??Attacking sic

用石英管保護

Protecting by quartz tube

18%CO

1500

4.0

無影響??No

20%CO

130

3.8

吸附碳粒影響sio2保護膜???Affecting SiO2?protective film by Adsorbing C grains

鹵素

704

3.8

腐蝕碳化硅減少sio2保護膜 Decreasing SiO2?protective film by eroding SiC

用石英管保護

Protecting by quartz tube

碳氫化合物

1310

3.1

吸附碳粒致熱污染，分解的碳沉積，易造成電氣故障??Causing hot pollution by adsorbing C grains

送進充分的空氣

Filling with plenty of air

氫

1290

3.1

與sic作用反應生成甲烷，減少sic2保護膜?Decreasing SiO2 protective film by Acting with SiC to generate Methane

露點激活

Make it Active at dew point

甲烷

1370

3.1

吸附碳粒致熱污染??Causing hot pollution by adsorbing C grains

N

1370

3.1

與sic反應形成氮化硅絕緣?Generating SiN insulating layer by acting with SiC

Na

1310

3.8

侵蝕碳化硅 Eroding sic

用石英管保護

Protecting by quartz tube

SO2

1310

3.8

侵蝕碳化硅??Eroding sic

用石英管保護

Protecting by quartz tube

真空

1204

3.8

氧

1310

3.8

碳化硅被氧化?Sic oxidized

水（不同含量）

1090-1370

3.1-3.6

與sic作用生成硅的水化物

Generating hydrate of silicon by acting on SiC