|
氣氛
Atmosphere
|
爐溫（℃）
Furnace
|
表面負(fù)荷
（W/cm2）
Surface?Load
|
對元件的影響
Effect?On?Elements
|
解決辦法
Solution
|
|
氨
|
1290
|
3.8
|
與sic作用生成甲烷減少sio2保護(hù)膜?Decreasing SiO2 protective film by Acting with SiC to generate Methane
|
露點(diǎn)激活
Make it active at dew point
|
|
CO?
|
1450
|
3.1
|
腐蝕碳化硅??Attacking sic
|
用石英管保護(hù)
Protecting by quartz tube
|
|
18%CO
|
1500
|
4.0
|
無影響??No
|
|
|
20%CO
|
130
|
3.8
|
吸附碳粒影響sio2保護(hù)膜???Affecting SiO2?protective film by Adsorbing C grains
|
|
|
鹵素
|
704
|
3.8
|
腐蝕碳化硅減少sio2保護(hù)膜 Decreasing SiO2?protective film by eroding SiC
|
用石英管保護(hù)
Protecting by quartz tube
|
|
碳?xì)浠衔?
|
1310
|
3.1
|
吸附碳粒致熱污染，分解的碳沉積，易造成電氣故障??Causing hot pollution by adsorbing C grains
|
送進(jìn)充分的空氣
Filling with plenty of air
|
|
氫
|
1290
|
3.1
|
與sic作用反應(yīng)生成甲烷，減少sic2保護(hù)膜?Decreasing SiO2 protective film by Acting with SiC to generate Methane
|
露點(diǎn)激活
Make it Active at dew point
|
|
甲烷
|
1370
|
3.1
|
吸附碳粒致熱污染??Causing hot pollution by adsorbing C grains
|
|
|
N
|
1370
|
3.1
|
與sic反應(yīng)形成氮化硅絕緣?Generating SiN insulating layer by acting with SiC
|
|
|
Na
|
1310
|
3.8
|
侵蝕碳化硅 Eroding sic
|
用石英管保護(hù)
Protecting by quartz tube
|
|
SO2
|
1310
|
3.8
|
侵蝕碳化硅??Eroding sic
|
用石英管保護(hù)
Protecting by quartz tube
|
|
真空
|
1204
|
3.8
|
|
|
|
氧
|
1310
|
3.8
|
碳化硅被氧化?Sic oxidized
|
|
|
水（不同含量）
|
1090-1370
|
3.1-3.6
|
與sic作用生成硅的水化物
Generating hydrate of silicon by acting on SiC
|
|
